Method of forming a packaged semiconductor device having enhanced wettable flank and structure

ABSTRACT

A packaged electronic device includes a substrate having a lead. The lead includes an outward facing side surface having a first height, and an inward facing side surface having a second height that is less than the first height. An electronic device is electrically connected to the lead. A package body encapsulates the electronic device and portions of the lead. The outward facing side surface is exposed through a side surface of the package body, and the inward facing side surface is encapsulated by the package body. A conductive layer is disposed on the outward facing side surface to provide the packaged electronic device with an enhanced wettable flank. In one embodiment, the electronic device is electrically connected to a thick terminal portion having the outward facing side surface. In another embodiment, the electronic device is electrically connected to a thin terminal portion having the inward facing side surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of co-pending U.S.patent application Ser. No. 16/734,309 filed on Jan. 4, 2020, which is acontinuation of U.S. patent application Ser. No. 16/229,077 filed onDec. 21, 2018 and issued as U.S. Pat. No. 10,529,655 on Jan. 7, 2020,which is a continuation application of U.S. patent application Ser. No.15/700,101 filed on Sep. 9, 2017 and issued U.S. Pat. No. 10,199,312 onFeb. 5, 2019, which are all expressly incorporated by reference herein,and priority thereto is hereby claimed.

BACKGROUND OF THE DISCLOSURE

The present invention relates, in general, to electronics, and moreparticularly, to semiconductor packages, structures thereof, and methodsof forming semiconductor packages.

In the past, semiconductor packages, such as Plastic Quad Flat PackNo-lead (PQFN) or Quad Flat Pack No-Lead Exposed Pad (QFN-EP) packageshave not had easily solderable, visually exposed terminations, becausethe package designs had terminations on the underside of thesemiconductor package for solder joints. The terminations on the edgesof such semiconductor packages, which were exposed after singulation,consisted of exposed copper. The exposed copper did not easily solderwet because of copper oxidation. Thus, visual determination that thesemiconductor package had soldered effectively to a next level ofassembly, such as a printed circuit board, could not be made by opticalviewing. Electrical test was the only way to determine electricalconnectivity of the soldered terminations. There are some applicationswhere full electrical test of all terminations is difficult orincomplete. Thus, in high reliability applications, such as automotiveapplications, it has been desired to visually check for terminationsolder joint integrity. It is for these purposes that wettable flanks,which are solder plated terminations of semiconductor packages, havebeen developed as a visual aid for the determination of solder operationeffectiveness.

Wettable flank plating is an additional process step that deposits asolderable conductive material, such as tin, with a normal conductivematerial thickness, on the semiconductor package underside terminals andon the exposed edge terminations or flanks. The wettable flank platingprotects the copper and allows soldering to occur on this external flankarea of the terminations such that optical inspection can be madeverifying a good solder fillet joint, and thus a good electricalconnection. Although progress has been made in wettable flank processes,improvements in conductive substrate structures and methods of formingsuch structures are needed to further enhance wettable flanks.

Accordingly, it is desirable to have a method and a structure thatprovides a packaged semiconductor device that improves the wettablesurface coverage for side or flank surfaces of a conductive substrate.It is also desirable for the structure and method to be easilyincorporated into manufacturing flows, accommodate multiple dieinterconnect schemes, and to be cost effective.

BRIEF SUMMARY

The present description includes, among other features, a packagedelectronic device structure and associated method include a leadstructure having an exposed side surface or flank surface having anincreased height compared to related devices. The exposed side surfaceprovides an enhanced wettable flank surface that improves the bondintegrity when the packaged electronic device is attached to a nextlevel of assembly, such as a printed circuit board. In addition, theincreased height enhances optical inspection of solder joints formedbetween the packaged electronic device and the next level of assembly.The structure and method provide for improved reliability byfacilitating stronger solder joints compared to previous approaches. Thestructure and method are suitable for packaged semiconductor devices andother electronic devices having exposed flank or side surfacesconfigured for subsequent deposition of solderable materials, including,but not limited to, power semiconductor devices. The lead structure canbe provided as part of, for example, a lead frame substrate, a build-upsubstrate, or a molded substrate.

More particularly, in one embodiment, a packaged electronic deviceincludes a substrate having a lead. The lead includes an outward facingside surface having a first height, and an inward facing side surfacehaving a second height that is less than the first height. An electronicdevice is electrically connected to the lead. A package bodyencapsulates the electronic device and portions of the lead. The outwardfacing side surface is exposed through a side surface of the packagebody, and the inward facing side surface is encapsulated by the packagebody. A conductive layer is disposed on the outward facing side surfaceto provide the packaged electronic device with an enhanced wettableflank. In one embodiment, the electronic device is electricallyconnected to a thick terminal portion having the outward facing sidesurface. In another embodiment, the electronic device is electricallyconnected to a thin terminal portion having the inward facing sidesurface. In a further embodiment, the lead has a first terminal portionhaving a thickness greater than or equal to about 250 microns.

In another embodiment, a packaged electronic device includes asubstrate. The substrate includes a lead that includes a first terminalportion having a first thickness and an outward facing side surface, anda second terminal portion having an inward facing side surface having asecond thickness less than the first thickness. The substrate furtherincludes a pad. The second terminal portion is proximate to the pad andthe first terminal portion is distal to the pad. An electronic device iselectrically connected to the lead. A package body encapsulates theelectronic device and portions of the lead and pad such that the outwardfacing side surface is exposed through a side surface of the packagebody, and the inward facing side surface is encapsulated by the packagebody. A conductive layer is disposed on the outward facing side surface.

In a further embodiment, a method for forming a packaged electronicdevice includes providing a substrate. The substrate includes a leadhaving a first terminal portion having a first thickness, and a secondterminal portion having an inward facing side surface having a secondthickness that is less than the first thickness. The method includeselectrically connecting an electronic device to the lead. The methodincludes providing a package body encapsulating the electronic deviceand portions of the lead and pad. The method includes removing a firstportion of the first terminal portion to provide an outward facing sidesurface of the lead. The method includes forming a conductive layer onthe outward facing side surface of the lead. The method includessingulating a second portion of the first terminal portion.

In one embodiment, providing the substrate includes providing aconductive substrate having a first major surface and a second majorsurface opposite to the first major surface, wherein the conductivesubstrate has the first thickness; forming a first recessed surfaceextending from a first portion the first major surface into theconductive substrate while leaving a second portion of the first majorsurface at the first thickness, wherein the first recessed surfacedefines the second thickness of the second terminal portion and thesecond portion defines the first thickness of the first terminalportion; and removing portions of the conductive substrate from thefirst recessed surface and the second major surface to define the firstterminal portion, the second terminal portion, and the pad, whereinremoving portions of the conductive substrate from the second surfaceprovides the inward facing side surface comprising an inward facingrecessed side surface.

In another embodiment, providing the substrate comprises providing acarrier having a first major surface and a second major surface oppositeto the first major surface; providing a conductive pattern on the firstmajor surface; and providing a conductive pillar on a first portion ofthe conductive pattern but not on a second portion of the conductivepattern, wherein the conductive pillar and the first portion ofconductive pattern provide the first terminal portion and the secondportion of the conductive pattern provides the second terminal portion.

In a further embodiment, providing the substrate comprises providing theconductive pattern with a third portion; the method further comprisesattaching the electronic device to the third portion; and the methodfurther comprises removing the carrier after forming the package body.

In a still further embodiment, providing the substrate comprisesproviding the conductive pattern with a third portion; the methodfurther comprises forming a molded layer covering portions of theconductive pillar and the first, second, and third portions of theconductive pattern; the method further comprises removing the carrierbefore electrically connecting the electronic device to the lead toexpose the conductive pattern to the outside of the molded layer; andthe method further comprises electrically connecting the electronicdevice to the third portion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a packaged electronicdevice in accordance with an embodiment of the present description;

FIG. 2 illustrates a partial cross-sectional view of the packagedelectronic device of FIG. 1 attached to a next level assembly inaccordance with the present description;

FIG. 3 illustrates a cross-sectional view of a packaged electronicdevice in accordance with an embodiment of the present description;

FIG. 4 illustrates a partial cross-sectional view of a packagedelectronic device in accordance with an embodiment of the presentdescription;

FIG. 5 is a flow chart of a method of manufacturing a packagedelectronic device in accordance with an embodiment of the presentdescription;

FIGS. 6-28 illustrate cross-sectional views of packaged electronicdevices at various stages of fabrication in accordance with the presentdescription; and

FIG. 29 illustrates a partial cross-sectional view of an alternativeembodiment of a substrate in accordance with the present description.

For simplicity and clarity of the illustration, elements in the figuresare not necessarily drawn to scale, and the same reference numbers indifferent figures denote the same elements. Additionally, descriptionsand details of well-known steps and elements are omitted for simplicityof the description. As used herein, the term and/or includes any and allcombinations of one or more of the associated listed items. In addition,the terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willbe further understood that the terms comprises, comprising, includes,and/or including, when used in this specification, specify the presenceof stated features, numbers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, numbers, steps, operations, elements, components, and/orgroups thereof. It will be understood that, although the terms first,second, etc. may be used herein to describe various members, elements,regions, layers and/or sections, these members, elements, regions,layers and/or sections should not be limited by these terms. These termsare only used to distinguish one member, element, region, layer and/orsection from another. Thus, for example, a first member, a firstelement, a first region, a first layer and/or a first section discussedbelow could be termed a second member, a second element, a secondregion, a second layer and/or a second section without departing fromthe teachings of the present disclosure. Reference to “one embodiment”or “an embodiment” means that a particular feature, structure orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the present invention. Thus, appearancesof the phrases “in one embodiment” or “in an embodiment” in variousplaces throughout this specification are not necessarily all referringto the same embodiment, but in some cases it may. Furthermore, theparticular features, structures or characteristics may be combined inany suitable manner, as would be apparent to one of ordinary skill inthe art, in one or more embodiments. Additionally, the term while meansa certain action occurs at least within some portion of a duration ofthe initiating action. The use of word about, approximately orsubstantially means a value of an element is expected to be close to astate value or position. However, as is well known in the art there arealways minor variances preventing values or positions from being exactlystated. Unless specified otherwise, as used herein the word over or onincludes orientations, placements, or relations where the specifiedelements can be in direct or indirect physical contact. It is furtherunderstood that the embodiments illustrated and described hereinaftersuitably may have embodiments and/or may be practiced in the absence ofany element that is not specifically disclosed herein.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a packaged electronicdevice 10, such as a packaged semiconductor device 10 in accordance witha first embodiment. In accordance with the present embodiment, packagedsemiconductor device 10 includes a pad 11, flag 11, die attach pad 11,die pad 11, or support pad 11 and leads 12 or terminals 12 disposedproximate to, but separated from, pad 11. In one embodiment, anelectronic device 16, electronic component 16, or electronic die 16,such as a semiconductor device 16 or semiconductor die 16 is connectedto or attached to pad 11 using an attach material 17. In someembodiments, semiconductor device 16 is an integrated circuit device, apower semiconductor device, an optical device, a sensor device, or otherdevices as known to those skilled in the art. By way of example, attachmaterial 17 can be a solder paste, a conductive epoxy, conductiveadhesives, conductive films, non-conductive epoxy, non-conductiveadhesives, non-conductive films, or other suitable attach materials asknown to those skilled in the art. In some embodiments, non-conductiverefers to electrically insulating and it is understood that suchmaterials may still be thermally conductive. Those skilled in the artwill appreciate that electronic device 16 is illustrated in simplifiedform, and may further include multiple diffused regions, multipleconductive layers, and multiple dielectric layers.

In accordance with the present embodiment, leads 12 comprise a uniqueshape compared to related devices. As illustrated in FIG. 1, one or moreleads 12 include a thick terminal portion 120 or thick lead portion 120,and a thin terminal portion 121 or thin lead portion 121. Stateddifferently, thick terminal portion 120 has a greater thickness orheight compared to thin terminal portion 121 in cross-sectional view toprovide a shelf portion 122 or step portion 122. In accordance with thepresent embodiment, thick terminal portion 120 is disposed distal to pad11 and thin terminal portion 121 is disposed proximate to pad 11. In oneembodiment, thick terminal portion 120 laterally abuts thin terminalportion 121, with thin terminal portion 121 interposed between thickterminal portion 120 and pad 11. In the present embodiment, thickterminal portion 120 includes an outward facing side surface 126,conductive side surface 126, outward facing flank surface 126, or flanksurface 126 that is configured for receiving a conductive layer 26. Insome embodiments, flank surface 126 is laterally recessed inward asgenerally illustrated in FIG. 1 and can be described as outward facingrecessed side surface 126. In this embodiment, conductive layer 26includes a vertical portion 260 and a horizontal portion 261. Horizontalportion 261 can be at least partially arcuate instead of straight orlinear, such as in cases where etching is used instead of sawing to formoutward facing flank surface 126. In most embodiments, conductive layer26 is further disposed adjacent a bottom facing surface 125 or lowersurface 125 of leads 12. In accordance with the present embodiment,thick terminal portion 120 includes a portion 1200 or outward facingportion 1200 that does not include conductive layer 26. In accordancewith the present embodiment, portions 1200 are absent conductivematerial 26 because portions 1200 are exposed or formed after conductivelayer 26 is formed.

In some embodiments, thin terminal portion 121 includes an inward facingside surface 128 that laterally opposes outward facing side surface 126in cross-sectional view. In some embodiments, inward facing side surface128 is laterally recessed inward as generally illustrated in FIG. 1 andcan be described as inward facing recessed side surface 128. By way ofexample, inward facing side surface 128 and outward facing side surface126 can be laterally recessed up to about 60 microns. In otherembodiments, inward facing side surface 128 is not recessed.

In accordance with the present embodiment, inward facing side surface128 has a height 129 or thickness 129 that is less than a height 131 orthickness 131 of outward facing side surface 126. In some embodiments,height 131 is greater than about 140 microns and height 129 is less thanabout 130 microns. By way of example, height 131 is in a range fromabout 140 microns through about 200 microns or more. In the same orother embodiments, height 131 can be at least approximately 10% greaterthan height 129 or more, such as approximately 50% greater than height129. In accordance with the present embodiment, the total height 133 orthickness 133 of thick terminal portion 120 can be up to about 250microns or more, which is different from previous devices that haveleads with a standard full thickness of less than 200 microns. Thisdifference provides flank surface 126 with a taller surface or increasedsurface area compared to prior devices having flank surfaces less than130 microns in height. In accordance with the present embodiment, thetaller flank surface 126 provides more solderable surface area forattaching packaged electronic device 10 to a next level of assembly,which improves bond integrity and reliability. In addition, thisenhances the ability to perform any necessary visual inspections of thebonded surfaces.

Packaged electronic device 10 further includes conductive connectivestructures 19 attached to a major surface of semiconductor device 16 andfurther connected to one or more leads 12. In some embodiments, one ormore or all of conductive connective structures 19 are attached to topsurfaces 123 of thin terminal portion 121. In other embodiments, one ormore or all of conductive connective structures 19 are attached to topsurfaces 124 of thick terminal portion 120. In some embodiments, it ispreferred to attach conductive connective structures 19 to top surfaces124 because top surfaces 124 are not etched surfaces, which can providea more reliable surface for attaching conductive connective structures19. In other embodiments, it is preferred to attach conductiveconnective structures 19 to top surfaces 123 of thin terminal portions121 to support a thinner package body. By way of example, conductiveconnective structures 19 comprise gold or copper wires or othermaterials as known to those skilled in the art. It is understood thatother conductive connective structures, such as clips, ribbon bonds, orother structures known to those skilled in the art can be used insteadof, or in addition to, the conductive wires. In addition, direct chipattachment methods can be used, which will be illustrated, for example,with FIG. 3.

Packaged electronic device 10 further includes a package body 36 thatcovers or encapsulates conductive connective structures 19,semiconductor die 16, at least portions of leads 12, and at leastportions of pad 11 while, in some embodiments, leaving lower or bottomsurfaces 125 of leads 12, flank surfaces 126 of leads 12, and lowersurface 110 of pad 11 exposed to the outside of packaged electronicdevice 10 as generally illustrated in FIG. 1. In some embodiments,package body 36 can be polymer based composite material, such as epoxyresin with filler, epoxy acrylate with filler, or polymer with properfiller. Package body 36 comprises a non-conductive and environmentallyprotective material that protects electronic device 16 from externalelements and contaminants. Package body 36 may be formed using pasteprinting, compressive molding, transfer molding, over-molding, liquidencapsulant molding, vacuum lamination, other suitable applicator, orother processes as known to those of skill in the art. In someembodiments, package body 36 is an epoxy mold compound (“EMC”) and canbe formed using transfer or injection molding techniques.

In accordance with the present embodiment, conductive side surfaces 126or outward facing flank surfaces 126 are exposed through side surfaces360 of package body 36, and are further covered by conductive layer 26,which can be a solderable layer 26. By way of example, conductive layer26 comprises tin (Sn) and can be formed using plating techniques. Insome embodiments, conductive layer 26 is further disposed on lowersurfaces 125 of leads 12 and on lower surface 110 of pad 11 as generallyillustrated in FIG. 1. In other embodiments, lower surface 110 may notbe exposed to the outside of packaged electronic device 10.

FIG. 2 illustrates a partial cross-sectional view of a portion ofpackaged electronic device 10 attached to a next level of assembly 200,such as a printed circuit board 200 having conductive traces 201 and 202disposed proximate to a first surface 203. In accordance with thepresent embodiment, outward facing flank surface 126 of lead 12 hasabout 55% more surface area for conductive layer 26 compared to relateddevices, which provides about a 55% increase in wettable flank surfacearea for solder attach material 24. In accordance with the presentembodiment, this improves the solder joint strength and the reliabilityof the assembled component compared to related devices. In addition,this enhances the ability to perform any necessary visual inspections ofthe bonded surfaces.

FIG. 3 illustrates a cross-sectional view of a packaged electronicdevice 30, such as a packaged semiconductor device 30 in accordance withanother embodiment. Packaged electronic device 30 is similar to packagedelectronic device 10 and only the differences will be describedhereinafter. In packaged electronic device 30, electronic device 16,such as semiconductor device 16 is directly attached to leads 12 and pad11 in a flip-chip configuration. In some embodiments, conductive bumps31 are used to attach electronic device 16 to leads 12 and pad 11. Insome embodiments, conductive bumps 31 comprise temperature reflowedsolder bumps and/or pillar bumps (e.g., copper pillar bumps that canhave corresponding solder tips), thermosonic or thermocompression bondedbumps (e.g., gold bumps), adhesively bonded bumps, or other bumpmaterials known to those skilled in the art. In some embodiments,conductive bumps 31 are first applied to bond pads 32 on electronicdevice 16 while in wafer form. In one embodiment, electronic device 16is directly attached to top surfaces 123 of thin terminal portions 121.In other embodiments, electronic device 16 can be directly attached totop surfaces 124 of thick terminal portions 120. In some embodiments,package body 36 provides an underfill structure for electronic device16. In additional embodiments, a separate underfill material can be usedand formed prior to forming package body 36.

FIG. 4 illustrates a partial cross-sectional view of a packagedelectronic device 40, such as a packaged semiconductor device 40 inaccordance with a further embodiment. Packaged electronic device 40 issimilar to packaged electronic device 10 and only the differences willbe described hereinafter. In packaged electronic device 40, a differentconfiguration of lead 12 is provided. In packaged electronic device 40lead 12 does not have a thin terminal portion 121, but instead consistsof a thick terminal portion 120 only. In this configuration, lead 12still includes outward facing recessed flank surface 126 and inwardfacing recessed side surface 128 that laterally opposes outward facingflank surface 126 in cross-sectional view. In accordance with thepresent embodiment, outward facing flank surface 126 has height 131greater than the height 129 of inward facing side surface 128 asdescribed with packaged electronic device 10. In the present embodiment,conductive connective structures 19 are attached to top surface 124 ofthick terminal portion 120 as generally illustrated in FIG. 4.

FIG. 5 is a flow chart of a method of manufacturing a packagedelectronic device, such as packaged electronic device 10 in accordancewith one embodiment. The method includes a step 510 of providing aconductive substrate having thick and thin terminal features. By wayexample, this can include thick terminal portions 120 and thin terminalportions 121 illustrated in FIG. 1. Stated a different way, step 510 caninclude providing a conductive substrate having an outward facingrecessed side surface and an opposing inward facing recessed sidesurface that has a smaller height than the outward facing recessed sidesurface, such as in the embodiment illustrated in FIG. 4. The methodincludes a step 520 of electrically connecting electronic components tothe conductive substrate. In some embodiments, the electronic componentscan include one or more electronic devices 16, such as semiconductordevices 16. The method includes a step 530 of forming a package body toencapsulate the electronic components and portions of the conductivesubstrate to provide an encapsulated subassembly. In some embodiments,the package body can include package body 36.

The method includes a step 540 of exposing portions of the thickterminal features including side portions of the thick terminalfeatures. By way of example, the side portions can include outwardfacing side surfaces 126. Step 550 includes forming a solderablematerial on portions of the conductive substrate including exposedportions of the thick terminal features. In some embodiments, thesolderable material can be conductive layer 26 and the exposed portionsof the conductive substrate include outward facing side surfaces 126,and can also include one or more of lower surfaces 125 of leads 12 andlower surface 110 of pad 11. Step 560 includes singulating theencapsulated subassembly to provide package electronic devices havingthick terminal features with enhanced wettable flanks. In accordancewith the present embodiment, the wettable flanks comprise outward facingside surfaces 126 having conductive layer 26 disposed thereon, whichhave an increased height and thus an increased surface area for bondingcompared to related devices.

Turning now to FIGS. 6-13, which illustrate cross-sectional views ofpackaged electronic devices at various stages of fabrication, the methodof FIG. 5 will be further described in accordance with a firstembodiment. In the present embodiment, step 510 of FIG. 5 is illustratedin FIGS. 6-9. In FIG. 6 a substrate 61, such as a conductive substrate61 is provided. In some embodiments, substrate 61 comprises a generallyflat plate of copper, a copper alloy, nickel-iron-cobalt alloys,iron-nickel alloys (e.g., Alloy 42), plated materials, or othermaterials known to those skilled in the art. In accordance with thepresent embodiment, substrate 61 has thickness 611 that is greater thansubstrates used for related devices to provide outward facing sidesurfaces 126 with increased height for enhanced wettable flank surfaces.In accordance with the present embodiment, thickness 61 can be 225microns or more, such as about 250 microns, compared to related deviceswhere the substrate thickness is less than 200 microns. In oneembodiment, a masking layer 62 is provided on a major surface 63 ofsubstrate 61, and a masking layer 64 is provided on a major surface 66of substrate 61. Masking layer 62 includes openings 67 that exposeportions of major surface 63 for additional processing. In someembodiments, masking layer 64 is provided without openings. Maskinglayers 62 and 64 can comprise photosensitive materials, such asphotoresist materials, polymer materials, dielectric materials, or othermasking materials known to those skilled in the art.

FIG. 7 illustrates substrate 61 after additional processing. In oneembodiment, portions of substrate 61 are removed extending inward frommajor surface 63 through openings 67 to provide recessed surfaces 630.In some embodiments, a heated spray etch apparatus is used to formrecessed surfaces 630. In some embodiments, masking layers 62 and 64 arethe removed and substrate 61 is rinsed and dried for further processing.

FIG. 8 illustrates substrate 61 after masking layers 82 and 84 aredisposed on major surfaces 63, 630, and 66 of substrate 61. Maskinglayers 82 and 84 can be photoresist layers patterned to provide openings87 and 88 that expose portions of major surface 66 and recessed surface630 respectively as generally illustrated in FIG. 8. In accordance withthe present embodiment, openings 87 are wider than openings 88. In asubsequent step, exposed portions of substrate 61 are then removed toprovide leads 12 and pads 11 as generally illustrated in FIG. 9. Inaccordance with the present embodiment, leads 12 are provided with thickterminal portions 120 and thin terminal portions 121. Further, this stepprovides thin terminal portions 121 with inward facing recessed surfaces128.

In some embodiments, an etching process is used to remove the exposedportions of substrate 61 in openings 87 and 88. Masking layers 82 and 84can then be removed and substrate 62 can be rinsed and dried foradditional processing. Those skilled in the art will appreciate that theedges of the etched features of substrate 61 may not be straight lines,but can be rounded or scalloped in cross-sectional view. In otherembodiments, the features of substrate 61 can be formed using stampingtechniques, chemical stamping techniques, laser cutting techniques,grinding techniques or other techniques as known to those skilled in theart including in combination with chemical etching. Although not shown,the elements of substrate 61 are typically held together using tie barsand surrounding frame structures for additional processing. Inaccordance with the present embodiment, substrate 61 is configured as aconductive leadframe substrate.

FIG. 10 illustrates substrate 61 after electronic devices 16, such assemiconductor devices 16, are electrically connected to portions ofsubstrate 61 in accordance with step 520 of FIG. 5. In one embodiment,electronic devices 16 are attached to pads 11 using attach material 17described previously. Conductive connective structures 19 can then beattached to electronic devices 16 and leads 12. As set forth previously,conductive connective structures 19 can be attached to either topsurface 124 of thick terminal portions 120, or to top surface 123 ofthin terminal portion 121, or combinations thereof can be used. It isunderstood that other types of conductive connective structures 19 canbe used, such as clips and/or ribbon bonds in any combination includingcombinations with conductive wire bonds. In addition, in step 520electronic devices 16 can be attached to pads 11 and leads 12 in aflip-chip configuration as described in FIG. 3.

FIG. 11 illustrates substrate 61 after forming package body 36 inaccordance with step 530 of FIG. 5. In one embodiment, package body 36is provided to encapsulate electronic devices 16, conductive connectivestructures 19, portions of leads 12, and portions of die pads 11 toprovide an encapsulated subassembly 531. In the present embodiment,lower surfaces 110 of die pads 11 and lower surfaces 125 of leads 12 areexposed to the outside of package body 36. As set forth previously,package body 36 can be polymer based composite material, such as epoxyresin with filler, epoxy acrylate with filler, or polymer with properfiller. Package body 36 comprises a non-conductive and environmentallyprotective material that protects electronic device 16 from externalelements and contaminants. Package body 36 may be formed using pasteprinting, compressive molding, transfer molding, over-molding, liquidencapsulant molding, vacuum lamination, other suitable applicator, orother processes as known to those of skill in the art. In someembodiments, package body 36 is an EMC, and can be formed using transferor injection molding techniques.

FIG. 12 illustrates encapsulated subassembly 531 after exposing portionsof thick terminal portions 120 of leads 12 including outward facing sidesurfaces 126 in accordance with step 540 of FIG. 5. In one embodiment, apartial sawing process is used to remove a portion of thick terminalportions 120 of leads 12 extending inward from lower surfaces 125. Inone embodiment, the sawing process does not extend all the way throughthick terminal portions 120 so that adjoining thick terminal portions120 in adjacent units remain physically connected as illustrated in FIG.12 by element 1201. This physical connection facilitates electricalcommunication for an electroplating process to form conductive layer 26on outward facing side surfaces 126. In other embodiments, other removaltechniques are used instead of or in combination with the sawingprocess. By way of example, etching, grinding, and/or laser removalprocesses can be used as well as other removal processes known to thoseskilled in the art.

Next, in some embodiments encapsulated subassembly 531 can be attachedto a belt finger portion of an electroplating apparatus, which suspendsthe subassembly within a plating solution to form conductive layers 26on exposed portions of substrate 61, including outward facing sidesurfaces 126 of thick terminal portions 120, lower surfaces 125 of leads12, and lower surfaces 110 of pads 11 in accordance with step 550 ofFIG. 5. In accordance with the present embodiment, conductive layer 26includes vertical portions 260 and horizontal portions 261 on thickterminal portions 120. Conductive layer 26 can be solderable materials,such as tin, cadmium, gold, silver, palladium, rhodium, copper, copperalloys, combinations thereof, or similar materials known to thoseskilled in the art. In some embodiments, a nickel barrier layer can beused before plating the solderable materials. In some embodiments,conductive layer 26 can have a thickness in a range from about 2 micronsto about 20 microns.

FIG. 13 illustrates encapsulated subassembly 531 after a singulationstep to separate the subassembly into individual packaged electronicdevices 10 in accordance with step 560 of FIG. 5. In some embodiments, asawing process can be used to singulate the individual devices alongsingulation line 561, which forms side surfaces 360 of package bodies 36and portions 1200 of leads 12 that are absent conductive layer 26. Thisstep provides individual packaged electronic devices 10 each havingoutward facing side surfaces 126 that are recessed and provided withconductive layers 126 configured to provide increased surface area orenhanced wettable flanks for attaching packaged electronic devices 10 toa next level of assembly, such as a printed circuit board 200 asillustrated in FIG. 2.

Turning now to FIGS. 14-20, which illustrate cross-sectional views ofpackaged electronic devices at various stages of fabrication, the methodof FIG. 5 will be further described in accordance with anotherembodiment. In the present embodiment, step 510 of FIG. 5 of providing aconductive substrate is illustrated in FIGS. 14-15. In FIG. 14, aconductive pattern 411 is formed on a first surface 418 of a carrier400. Carrier 400 further includes a second surface 419 that is oppositeto the first surface 418. In one embodiment, carrier 400 has a thicknessin a range from approximately 3 microns through 300 microns. In someembodiments, carrier 400 may be formed of one or more of a metal,silicon, glass, an epoxy resin or other materials known to those skilledin the art. At least the first surface 418 is prepared and cleaned forreceiving the first conductive pattern 411.

In one embodiment, conductive pattern 411 may be made of a conductivematerial comprising copper (Cu), gold (Au), silver (Ag), aluminum (Al)or other materials as known to those skilled in the art. In addition,conductive pattern 411 may be formed by physical vapor deposition (PVD),chemical vapor deposition (CVD), metal sputtering, metal evaporation,electrolytic or electroless plating or other formation techniques knownto those skilled in the art. In some embodiments, conductive pattern 411has a thickness in a range from approximately 3 microns through 50microns. After deposition, the conductive material may be patterned byphysical etching or chemical etching, or other techniques known to thoseskilled in the art. In other embodiments, a masking layer (not shown)may be first deposited on the first major surface 418 and the conductivematerial subsequently deposited. The masking layer may or may not beremoved after the conductive pattern is formed depending on theapplication. In accordance with the present embodiment, conductivepattern 411 forms portions of leads 12 and pads 11 for a substrate 611.In some embodiments, portions of conductive pattern 411 can be referredto as conductive traces 411 or traces 411.

Next, referring to FIG. 15, conductive pillars 412 are provided onportions of conductive pattern 411 that will be used as leads 12 ofsubstrate 611. Conductive pillars 412 are formed to extend away oroutward from conductive pattern 411 and away from first surface 418 ofcarrier 400. In one embodiment, conductive pillars 412 are preferablyformed of a material having good electrical, thermal conductivity, suchas copper (Cu), a copper alloy or similar materials as known to thoseskilled in the art. In some embodiments, conductive pillars 412 have athickness in a range from approximately 30 microns through 300 microns.In addition, conductive pillars 412 may be formed using PVD, CVD, metalsputtering, metal evaporation, electrolytic or electroless plating orother formation techniques as known to those of skill in the art.Photomasking and etch techniques can be used to form conductive pillars412 in desired shapes, such as cuboid shapes. In one embodiment,electrolytic or electroless plating techniques are used with a maskinglayer provided over the first major surface 418 and having a preselectedpattern for forming the first conductive pillars 412 in desiredlocations on conductive pattern 411. In accordance with the presentembodiment, conductive pillars 412 have a narrower width than conductivepattern 411 where conductive pillars 412 are formed. In accordance withthe present embodiment, conductive pillars 412 (and those portions ofconductive pattern 411 disposed below conductive pillars 412) areconfigured to provide thick terminal portions 120 of leads 12, and thoseportions of conductive pattern 411 adjacent to, but not covered by,conductive pillars 412 are configured to provide thin terminal portions121 of leads 12. Those portions of conductive pattern 411 not providedwith conductive pillars are configured to provide pads 11. In accordancewith the present embodiment, substrate 611 is configured as a build-upsubstrate. From this point forward in the description of FIGS. 16-20,leads 12 and pads 11 designations will be used with substrate 611.

FIG. 16 illustrates substrate 611 after electronic devices 16 areelectrically connected to portions of substrate 611 in accordance withstep 520 of FIG. 5. In one embodiment, electronic devices 16 areattached to pads 11 using attach material 17 described previously.Conductive connective structures 19 can then be attached to electronicdevices 16 and leads 12. As set forth previously, conductive connectivestructures 19 can be attached to either top surface 124 of thickterminal portions 120, or to top surface 123 of thin terminal portion121, or combinations thereof can be used. It is understood that othertypes of conductive connective structures 19 can be used, such as clipsand/or ribbon bonds in any combination including combinations withconductive wires. In addition, in step 520 electronic devices 16 can beattached to pads 11 and leads 12 in a flip-chip configuration asdescribed in FIG. 3.

FIG. 17 illustrates substrate 611 after forming package body 36 inaccordance with step 530 of FIG. 5. In one embodiment, package body 36is provided to encapsulate electronic devices 16, conductive connectivestructures 19, portions of leads 12, and portions of die pads 11 toprovide an encapsulated subassembly 531. In the present embodiment,lower surfaces 110 of die pads 11 and lower surfaces 125 of leads 12 areexposed to the outside of package body 36 adjoining major surface 418 ofcarrier 400. Package body 36 can be the same materials and can formedusing the same processes as described previously and the descriptionwill not be repeated again here. Carrier 400 can then be removed toprovide an encapsulated subassembly 631 as illustrated in FIG. 18.

FIG. 19 illustrates encapsulated subassembly 631 after exposing portionsof thick terminal portions 120 of leads 12 including outward facing sidesurfaces 126 in accordance with step 540 of FIG. 5. In one embodiment, apartial sawing process is used to remove a portion of thick terminalportions 120 of leads 12 extending inward from lower surfaces 125. Inone embodiment, the sawing process does not extend all the way throughthick terminal portions 120 so that adjoining thick terminal portions120 in adjacent units remain physically connected as illustrated in FIG.19 by element 1201. This physical connection facilitates electricalcommunication for an electroplating process to form conductive layer 26on outward facing side surfaces 126. In other embodiments, other removaltechniques are used instead of or in combination with the sawingprocess. By way of example, etching, grinding, and/or laser removalprocesses can be used as well as other removal processes known to thoseskilled in the art.

Next, in some embodiments encapsulated subassembly 631 can be attachedto a belt finger portion of an electroplating apparatus, which suspendsthe subassembly within a plating solution to form conductive layers 26on exposed portions of substrate 61, including outward facing sidesurfaces 126 of thick terminal portions 120, lower surfaces 125 of leads12, and lower surfaces 110 of pads 11 in accordance with step 550 ofFIG. 5. In accordance with the present embodiment, conductive layer 26includes vertical portions 260 and horizontal portions 261 on thickterminal portions 120. Conductive layer 26 can be the same materials asdescribed previously and the description will not repeated again here.

FIG. 20 illustrates encapsulated subassembly 631 after a singulationstep to separate the subassembly into individual packaged electronicdevices 101 in accordance with step 560 of FIG. 5. In some embodiments,a sawing process can be used to singulate the individual devices alongsingulation lines 661, which forms side surfaces 360 of package bodies36 and portions 1200 of leads 12 that are absent conductive layer 26.This step provides individual packaged electronic devices 101 eachhaving outward facing side surfaces 126 that are recessed and providedwith conductive layers 126 configured to provide increased surface areaor enhanced wettable flanks for attaching packaged electronic devices101 to a next level of assembly, such as a printed circuit board 200 asillustrated in FIG. 2.

Turning now to FIGS. 21-28, which illustrate cross-sectional views ofpackaged electronic devices at various stages of fabrication, the methodof FIG. 5 will be further described in accordance with a furtherembodiment. In the present embodiment, step 510 of FIG. 5 of providing aconductive substrate is illustrated in FIGS. 21-25. In FIG. 21, aconductive pattern 711 is formed on a first surface 718 of a carrier700. Carrier 700 further includes a second surface 719 that is oppositeto the first surface 718. In one embodiment, carrier 700 has a thicknessin a range from approximately 3 microns through 300 microns. In someembodiments, carrier 700 may be formed of one or more of a metal,silicon, glass, an epoxy resin or other materials known to those skilledin the art. At least the first surface 718 is prepared and cleaned forreceiving the first conductive pattern 711.

In one embodiment, conductive pattern 711 may be made of a conductivematerial comprising copper (Cu), gold (Au), silver (Ag), aluminum (Al)or other materials as known to those skilled in the art. In addition,conductive pattern 711 may be formed by PVD, CVD, metal sputtering,metal evaporation, electrolytic or electroless plating or otherformation techniques known to those skilled in the art. In someembodiments, conductive pattern 711 has a thickness in a range fromapproximately 3 microns through 50 microns. After deposition, theconductive material may be patterned by physical etching or chemicaletching, or other techniques known to those skilled in the art. In otherembodiments, a masking layer (not shown) may be first deposited on thefirst major surface 718 and the conductive material subsequentlydeposited. The masking layer may or may not be removed after theconductive pattern is formed depending on the application. In accordancewith the present embodiment, conductive pattern 711 forms portions ofleads 12 and traces 714 for a substrate 612.

Next, referring to FIG. 22, a conductive pillar 712 is provided on aportion of conductive pattern 711 that will be used for leads 12 ofsubstrate 612. Conductive pillar 712 is formed to extend away or outwardfrom conductive pattern 711 and away from first surface 718 of thecarrier 700. In one embodiment, conductive pillar 712 is preferablyformed of a material having good electrical, thermal conductivity, suchas copper (Cu), a copper alloy or similar materials as known to thoseskilled in the art. In one embodiment, conductive pillars 712 have athickness in a range from approximately 30 microns through 300 microns.In addition, conductive pillars 712 may be formed using PVD, CVD, metalsputtering, metal evaporation, electrolytic or electroless plating orother formation techniques as known to those of skill in the art.Photomasking and etch techniques can be used to form conductive pillars712 in desired shapes, such as cuboid shapes. In one embodiment,electrolytic or electroless plating techniques are used with a maskinglayer provided over the first major surface 718 and having a preselectedpattern for forming the first conductive pillars 712 in desiredlocations on conductive pattern 711. In accordance with the presentembodiment, conductive pillar 712 has a narrower width than conductivepattern 711 where conductive pillar 712 is formed. In accordance withthe present embodiment, conductive pillar 712 (and that portion ofconductive pattern 711 disposed below conductive pillar 712) isconfigured to provide thick terminal portions 120 of leads 12, and thoseportions of conductive pattern 711 adjacent to, but not covered by,conductive pillar 712 are configured to provide thin terminal portions121 of leads 12. In accordance with the present embodiment, substrate612 is configured as a molded substrate. From this point forward in thedescription of FIGS. 23-28, lead 12 and traces 714 designations will beused with substrate 612.

FIG. 23 illustrates substrate 612 after additional processing. In oneembodiment, substrate 612 is encapsulated with a molded layer 736 thatcovers or encapsulates lead 12, traces 714, and exposed portions ofcarrier 700. Molded layer 736 can be polymer based composite material,such as epoxy resin with filler, epoxy acrylate with filler, or polymerwith proper filler. Molded layer 736 may be formed using paste printing,compressive molding, transfer molding, over-molding, liquid encapsulantmolding, vacuum lamination, other suitable applicator, or otherprocesses as known to those of skill in the art. In some embodiments,molded layer 736 is an EMC, and can be formed using transfer orinjection molding techniques. In one embodiment, molded layer 736 isprovided to extend over the top of thick terminal portion 120 of lead12. In a subsequent step, a portion of molded layer 736 can be removedto expose an outer surface 1240 of thick terminal portion 120 of lead 12as illustrated in FIG. 24. In some embodiments, portions of molded layer736 can be removed using grinding techniques, etching techniques,combination thereof, or other removal techniques known to those skilledin the art. In other embodiments, molded layer 736 can be as-formed withthe top surface of thick terminal portion 120 exposed by placing anupper mold plate adjacent to thick terminal portion 120 during themolding process. In the alternative, film-assisted molding can be used.

FIG. 25 illustrates substrate 612 after carrier 700 is removed to exposetraces 714 and leads 12 to the outside for further processing. Inaccordance with the present embodiment, substrate 612 is configured as amolded substrate and has been flipped or rotated 180 degrees from FIG.24.

FIG. 26 illustrates substrate 612 after electronic devices 16 areelectrically connected to portions of substrate 612 in accordance withstep 520 of FIG. 5. In one embodiment, electronic devices 16 areattached in a flip-chip configuration to traces 714 and leads 12 usingconductive bumps 31. In some embodiments, conductive bumps 31temperature reflowed solder bumps, thermosonic or thermocompressionbonded bumps (e.g., gold bumps), adhesively bonded bumps, or other bumpmaterials as known to those skilled in the art. In some embodiments,conductive bumps are first applied to bond pads (not shown) onelectronic devices 16 while in wafer form. In one embodiment, electronicdevice 16 is attached to lead 12 such that a peripheral edge 160 ofelectronic die 16 extends to only overlap thin terminal portion 121. Inother embodiments, electronic device 16 is attached to lead 12 such thatperipheral edge 160 of electronic die 16 extends to overlap at least aportion of thick terminal portion 120. In some embodiments, package body36 provides an underfill structure for electronic device 16. Inadditional embodiments, a separate underfill material can be used andcan be formed prior to forming package body 36.

FIG. 26 further illustrates substrate 612 after forming package body 36in accordance with step 530 of FIG. 5. In one embodiment, package body36 is provided to encapsulate electronic devices 16, portions of leads12, and portions of traces 714 provide an encapsulated subassembly 731.Package body 36 can be the same materials and can formed using the sameprocesses as described previously and the description will not berepeated again here.

FIG. 27 illustrates encapsulated subassembly 731 after exposing portionsof thick terminal portions 120 of leads 12 including outward facing sidesurfaces 126 in accordance with step 540 of FIG. 5. In one embodiment, apartial sawing process is used to remove a portion of thick terminalportions 120 of leads 12 extending inward from outer surface 1240 ofthick terminal portions 120. In one embodiment, the sawing process doesnot extend all the way through thick terminal portions 120 so thatadjoining thick terminal portions 120 in adjacent units remainphysically connected as illustrated in FIG. 27 by element 1201. Thisphysical connection facilitates electrical communication for theelectroplating process to form conductive layer 26 on outward facingside surfaces 126. In another embodiment, the removal process completelyseparates the conductive pillar 712 portion of lead 12, but terminatesproximate to underlying conductive pattern 711 so that conductivepattern 711 remains intact (i.e., conductive pattern 711 provideselement 1201) to facilitate electrical communication for theelectroplating process to form conductive layer 26. In otherembodiments, other removal techniques are used instead of or incombination with the sawing process. By way of example, etching,grinding, and/or laser removal processes can be used as well as otherremoval processes known to those skilled in the art.

Next, in some embodiments encapsulated subassembly 731 can be attachedto a belt finger portion of an electroplating apparatus, which suspendsthe subassembly within a plating solution to form conductive layers 26on exposed portions of thick terminal portions 120 in accordance withstep 550 of FIG. 5. In accordance with the present embodiment,conductive layer 26 includes vertical portions 260 and horizontalportions 261 on thick terminal portions 120. Conductive layer 26 can bethe same materials as described previously and the description will notrepeated again here.

FIG. 28 illustrates encapsulated subassembly 731 after a singulationstep to separate the subassembly into individual packaged electronicdevices 102 in accordance with step 560 of FIG. 5. In some embodiments,a sawing process can be used to singulate the individual devices alongsingulation lines 761, which forms side surfaces 360 of package bodies36 and portions 1200 of leads 12 that are absent conductive layer 26.This step provides individual packaged electronic devices 102 eachhaving outward facing side surfaces 126 that are recessed and providedwith conductive layers 126 configured to provide increased surface areaor wettable flanks for attaching packaged electronic devices 102 to anext level of assembly, such as a printed circuit board 200 asillustrated in FIG. 2.

FIG. 29 illustrates a partial cross-sectional view of substrate 612 inaccordance with an alternative embodiment. In the present embodiment,conductive pattern 711 is recessed below a major surface 737 of moldedlayer 736. The recessed surfaces can be formed using, for example,masking and etching techniques. One advantage of providing conductivepattern 711 as recessed is that it can facilitate alignment ofelectronic device 16 to substrate 612.

In view of all of the above, it is evident that a novel structure andmethod of providing the structure has been disclosed that includes alead structure having an outwardly facing side surface with enhancedsurface area for providing a wettable flank. More particularly, theoutward facing side surface has an increased height for receiving asolderable layer compared to related devices. In some embodiments thelead structure includes a thick terminal portion that has the outwardlyfacing side surface and a thin terminal portion having an inwardlyfacing side surface that is absent the solderable layer. An electronicdevice can be electrically connected to either the thick terminalportion or the thin terminal portion. The lead structure can be providedas part of, for example, a lead frame structure, a build-up substratestructure, or a molded substrate structure. The exposed side surfaceprovides an enhanced wettable flank surface that improves the bondintegrity when the packaged electronic device is attached to a nextlevel of assembly, such as a printed circuit board. In addition, theincreased height enhances optical inspection of solder joints formedbetween the packaged electronic device and the next level of assembly.The structure and method provide for improved reliability byfacilitating stronger solder joints compared to previous approaches.

While the subject matter of the invention is described with specificpreferred embodiments and example embodiments, the foregoing drawingsand descriptions thereof depict only typical embodiments of the subjectmatter, and are not therefore to be considered limiting of its scope. Itis evident that many alternatives and variations will be apparent tothose skilled in the art. By way of example, multiple electronic devicescan be attached to a substrate in side-by-side configurations, instacked configurations, combinations thereof, or other configurationsknown to those skilled in the art. In addition, the packaged electronicdevice can leads on less than all sides of the package body.

As the claims hereinafter reflect, inventive aspects may lie in lessthan all features of a single foregoing disclosed embodiment. Thus, thehereinafter expressed claims are hereby expressly incorporated into thisDetailed Description of the Drawings, with each claim standing on itsown as a separate embodiment of the invention. Furthermore, while someembodiments described herein include some but not other featuresincluded in other embodiments, combinations of features of differentembodiments are meant to be within the scope of the invention and meantto form different embodiments as would be understood by those skilled inthe art.

What is claimed is:
 1. A method for forming a packaged electronicdevice, comprising: providing a conductive substrate comprising thickterminal features, thin terminal features, and a first encapsulantencapsulating portions of the thick terminal features and the thinterminal features, wherein: major surfaces of the thin terminal featuresare recessed with respect to major surfaces the thick terminal featuresto define offset portions; attaching an electronic component to theconductive substrate; providing a second encapsulant encapsulating theelectronic component and at least portions of the conductive substrateto provide an encapsulated sub-assembly; removing first portions of thethick terminal features to provide outward facing side surfaces of thethick terminal features having a first height; and providing aconductive material over the exposed portions of the outward facing sidesurfaces of the thick terminal features.
 2. The method of claim 1,wherein: removing first portions of the thick terminal featurescomprises partially sawing into the thick terminal features.
 3. Themethod of claim 1, wherein: removing first portions of the thickterminal features comprises partially etching into the thick terminalfeatures.
 4. The method of claim 1, further comprising: singulating thesubassembly through second portions of the thick terminal features. 5.The method of claim 1, wherein: providing the conductive substratecomprises providing the thin terminal features comprising inward facingside surfaces having a second height; and the first height is greaterthan the second height.
 6. The method of claim 1, wherein: providing theconductive substrate comprises: providing a conductive pattern;providing the thin terminal features comprising first portions of theconductive pattern; and providing the thick terminal features comprisingsecond portions of the conductive pattern having conductive pillarportions.
 7. The method of claim 1, wherein: removing comprisesproviding the outward facing side surfaces having an arcuate shape. 8.The method of claim 1, wherein: providing the conductive substratecomprises providing surfaces of the thick terminal features exposed froma lower surface of the first encapsulant.
 9. The method of claim 1,wherein: attaching the electronic component comprises attaching theelectronic component to the thin terminal portions in a flip-chipconfiguration.
 10. The method of claim 1, wherein: providing theconductive material comprises plating the conductive layer.
 11. Themethod of claim 1, wherein: providing the conductive substrate comprisesstamping the conductive substrate to form the offset portions.
 12. Themethod of claim 1, wherein: providing the conductive substrate comprisesetching the conductive substrate to forming the offset portions.
 13. Apackaged electronic device comprising: a substrate comprising: a leadcomprising: a first terminal portion having a first thickness and anoutward facing side surface; and a second terminal portion having asecond thickness less than the first thickness to define an offsetportion; and a first encapsulant covering portions of the lead; anelectronic device electrically coupled to the lead; a second encapsulantcovering the electronic device, wherein: the outward facing side surfaceis exposed from a side surface of the first encapsulant; a bottomsurface of the first terminal portion is exposed from a lower surface ofthe first encapsulant; and a top surface of the first terminal portionis exposed from an upper surface of the first encapsulant and is coveredby the second encapsulant; and a conductive layer disposed over theoutward facing side surface.
 14. The packaged electronic device of claim13, wherein: the electronic device is flip-chip coupled to the secondterminal portion of the lead with a first conductive bump.
 15. Thepackaged electronic device of claim 13, wherein: the outward facing sidesurface comprises an etched surface.
 16. The packaged electronic deviceof claim 13, wherein: the outward facing side surface comprises a sawnsurface.
 17. A packaged electronic device, comprising: a substratecomprising: a lead comprising: a lead lower side; a lead top side; anoutward facing recessed side surface comprising: a first portion thatextends upward from the lead lower side towards the lead top side to afirst location having a first height; and a second portion that extendslaterally outward from the first location towards an outer edge of thelead; and a first encapsulant encapsulating portions of the lead,wherein: the outward facing recessed side surface is exposed from a sidesurface of the first encapsulant; an electronic device electricallycoupled to the lead; a second encapsulant encapsulating the electronicdevice; and a conductive layer disposed over the outward facing recessedside surface.
 18. The packaged electronic device of claim 17, wherein:the lead further comprises: a first terminal portion having the outwardfacing recessed side surface; and a second terminal portion; and thefirst terminal portion is thicker than the second terminal portion todefine an offset portion.
 19. The packaged electronic device of claim17, wherein: the outward facing recessed side surface comprises anetched surface.
 20. The packaged electronic device of claim 19, wherein:the outward facing recessed side surface comprises a sawn surface.